Thermal Effects on Initial Volatile Response and Relaxation Dynamics of Resistive RAM Devices.
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| Title: | Thermal Effects on Initial Volatile Response and Relaxation Dynamics of Resistive RAM Devices. |
|---|---|
| Authors: | Abbey, Thomas1, ta5g14@ecs.soton.ac.uk, Giotis, Christos1, c.giotis@soton.ac.uk, Serb, Alex1, a.serb@soton.ac.uk, Stathopoulos, Spyros1, s.stathopoulos@soton.ac.uk, Prodromakis, Themis1, t.prodromakis@soton.ac.uk |
| Source: | IEEE Electron Device Letters; Mar2022, Vol. 43 Issue 3, p386-389, 4p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 155494706 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Thermal Effects on Initial Volatile Response and Relaxation Dynamics of Resistive RAM Devices. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Abbey%2C+Thomas%22">Abbey, Thomas</searchLink><relatesTo>1</relatesTo>, <i>ta5g14@ecs.soton.ac.uk</i><br /><searchLink fieldCode="AU" term="%22Giotis%2C+Christos%22">Giotis, Christos</searchLink><relatesTo>1</relatesTo>, <i>c.giotis@soton.ac.uk</i><br /><searchLink fieldCode="AU" term="%22Serb%2C+Alex%22">Serb, Alex</searchLink><relatesTo>1</relatesTo>, <i>a.serb@soton.ac.uk</i><br /><searchLink fieldCode="AU" term="%22Stathopoulos%2C+Spyros%22">Stathopoulos, Spyros</searchLink><relatesTo>1</relatesTo>, <i>s.stathopoulos@soton.ac.uk</i><br /><searchLink fieldCode="AU" term="%22Prodromakis%2C+Themis%22">Prodromakis, Themis</searchLink><relatesTo>1</relatesTo>, <i>t.prodromakis@soton.ac.uk</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; Mar2022, Vol. 43 Issue 3, p386-389, 4p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=155494706 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/LED.2022.3145620 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 386 Titles: – TitleFull: Thermal Effects on Initial Volatile Response and Relaxation Dynamics of Resistive RAM Devices. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Abbey, Thomas – PersonEntity: Name: NameFull: Giotis, Christos – PersonEntity: Name: NameFull: Serb, Alex – PersonEntity: Name: NameFull: Stathopoulos, Spyros – PersonEntity: Name: NameFull: Prodromakis, Themis IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 03 Text: Mar2022 Type: published Y: 2022 Identifiers: – Type: issn-print Value: 07413106 Numbering: – Type: volume Value: 43 – Type: issue Value: 3 Titles: – TitleFull: IEEE Electron Device Letters Type: main |
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