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Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors.

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Title: Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors.
Authors: Zhang, Qing1, Xiong, Hao1, Wang, Qiangfei1, Xu, Liping1, Deng, Menghan1, Zhang, Jinzhong1, jzzhang@ee.ecnu.edu.cn, Fuchs, Dirk2, Li, Wenwu1, Shang, Liyan1, Li, Yawei1, Hu, Zhigao1,3,4, Chu, Junhao1,3,4
Source: Advanced Electronic Materials; May2022, Vol. 8 Issue 5, p1-7, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 156901356
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors.
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Electronic+Materials%22">Advanced Electronic Materials</searchLink>; May2022, Vol. 8 Issue 5, p1-7, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=156901356
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        Value: 10.1002/aelm.202101189
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              Text: May2022
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