APA (7th ed.) Citation

Mitro, S. K., Saiduzzaman, M., Asif, T. I., & Hossain, K. M. (2022). Band gap engineering to stimulate the optoelectronic performance of lead-free halide perovskites RbGeX3 (X = Cl, Br) under pressure. Journal of Materials Science: Materials in Electronics, 33(17), 13860. https://doi.org/10.1007/s10854-022-08318-2

Chicago Style (17th ed.) Citation

Mitro, S. K., Md Saiduzzaman, Tariqul Islam Asif, and Khandaker Monower Hossain. "Band Gap Engineering to Stimulate the Optoelectronic Performance of Lead-free Halide Perovskites RbGeX3 (X = Cl, Br) Under Pressure." Journal of Materials Science: Materials in Electronics 33, no. 17 (2022): 13860. https://doi.org/10.1007/s10854-022-08318-2.

MLA (9th ed.) Citation

Mitro, S. K., et al. "Band Gap Engineering to Stimulate the Optoelectronic Performance of Lead-free Halide Perovskites RbGeX3 (X = Cl, Br) Under Pressure." Journal of Materials Science: Materials in Electronics, vol. 33, no. 17, 2022, p. 13860, https://doi.org/10.1007/s10854-022-08318-2.