APA (7th ed.) Citation

Lee, F., Wu, Y. S., Joshi, A., Basol, B. M., Chang, C., & Lin, K. (2022). Annealing effects on electrical property depth profiles of BF2 and P implanted polycrystalline Si determined by differential hall effect metrology. Journal of Materials Science: Materials in Electronics, 33(20), 16272. https://doi.org/10.1007/s10854-022-08520-2

Chicago Style (17th ed.) Citation

Lee, Fa-Yan, YewChung Sermon Wu, Abhijeet Joshi, Bulent M. Basol, Chia-He Chang, and Kun-Lin Lin. "Annealing Effects on Electrical Property Depth Profiles of BF2 and P Implanted Polycrystalline Si Determined by Differential Hall Effect Metrology." Journal of Materials Science: Materials in Electronics 33, no. 20 (2022): 16272. https://doi.org/10.1007/s10854-022-08520-2.

MLA (9th ed.) Citation

Lee, Fa-Yan, et al. "Annealing Effects on Electrical Property Depth Profiles of BF2 and P Implanted Polycrystalline Si Determined by Differential Hall Effect Metrology." Journal of Materials Science: Materials in Electronics, vol. 33, no. 20, 2022, p. 16272, https://doi.org/10.1007/s10854-022-08520-2.