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Annealing effects on electrical property depth profiles of BF2 and P implanted polycrystalline Si determined by differential hall effect metrology.

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Title: Annealing effects on electrical property depth profiles of BF2 and P implanted polycrystalline Si determined by differential hall effect metrology.
Authors: Lee, Fa-Yan1, Wu, YewChung Sermon1, sermonwu@faculty.nctu.edu.tw, Joshi, Abhijeet2, Basol, Bulent M.2, Chang, Chia-He3, Lin, Kun-Lin3, kllin@narlabs.org.tw
Source: Journal of Materials Science: Materials in Electronics; Jul2022, Vol. 33 Issue 20, p16272-16285, 14p
Database: Applied Science & Technology Source
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ISSN:09574522
DOI:10.1007/s10854-022-08520-2