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Annealing effects on electrical property depth profiles of BF2 and P implanted polycrystalline Si determined by differential hall effect metrology.

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Title: Annealing effects on electrical property depth profiles of BF2 and P implanted polycrystalline Si determined by differential hall effect metrology.
Authors: Lee, Fa-Yan1, Wu, YewChung Sermon1, sermonwu@faculty.nctu.edu.tw, Joshi, Abhijeet2, Basol, Bulent M.2, Chang, Chia-He3, Lin, Kun-Lin3, kllin@narlabs.org.tw
Source: Journal of Materials Science: Materials in Electronics; Jul2022, Vol. 33 Issue 20, p16272-16285, 14p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 157778255
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  Data: Annealing effects on electrical property depth profiles of BF2 and P implanted polycrystalline Si determined by differential hall effect metrology.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Jul2022, Vol. 33 Issue 20, p16272-16285, 14p
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1007/s10854-022-08520-2
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      – Code: eng
        Text: English
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        PageCount: 14
        StartPage: 16272
    Titles:
      – TitleFull: Annealing effects on electrical property depth profiles of BF2 and P implanted polycrystalline Si determined by differential hall effect metrology.
        Type: main
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          Name:
            NameFull: Lee, Fa-Yan
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            NameFull: Wu, YewChung Sermon
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            NameFull: Joshi, Abhijeet
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            NameFull: Basol, Bulent M.
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            NameFull: Chang, Chia-He
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            NameFull: Lin, Kun-Lin
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          Dates:
            – D: 15
              M: 07
              Text: Jul2022
              Type: published
              Y: 2022
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              Value: 33
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              Value: 20
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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