APA (7th ed.) Citation

Akhavan, N. D., Umana-Membreno, G. A., Gu, R., Antoszewski, J., & Faraone, L. (2022). Design Principles for High QE HgCdTe Infrared Photodetectors for eSWIR Applications. Journal of Electronic Materials, 51(9), 4742. https://doi.org/10.1007/s11664-022-09809-y

Chicago Style (17th ed.) Citation

Akhavan, N. D., G. A. Umana-Membreno, R. Gu, J. Antoszewski, and L. Faraone. "Design Principles for High QE HgCdTe Infrared Photodetectors for ESWIR Applications." Journal of Electronic Materials 51, no. 9 (2022): 4742. https://doi.org/10.1007/s11664-022-09809-y.

MLA (9th ed.) Citation

Akhavan, N. D., et al. "Design Principles for High QE HgCdTe Infrared Photodetectors for ESWIR Applications." Journal of Electronic Materials, vol. 51, no. 9, 2022, p. 4742, https://doi.org/10.1007/s11664-022-09809-y.