APA (7th ed.) Citation

Lin, D., Kang, W., Wu, Q., Song, A., Wu, X., Liu, G., . . . Kang, J. (2022). High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier. Nanoscale Research Letters, 17(1), 1. https://doi.org/10.1186/s11671-022-03712-5

Chicago Style (17th ed.) Citation

Lin, Di, et al. "High-Efficient Spin Injection in GaN at Room Temperature Through A Van Der Waals Tunnelling Barrier." Nanoscale Research Letters 17, no. 1 (2022): 1. https://doi.org/10.1186/s11671-022-03712-5.

MLA (9th ed.) Citation

Lin, Di, et al. "High-Efficient Spin Injection in GaN at Room Temperature Through A Van Der Waals Tunnelling Barrier." Nanoscale Research Letters, vol. 17, no. 1, 2022, p. 1, https://doi.org/10.1186/s11671-022-03712-5.