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High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier.

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Title: High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier.
Authors: Lin, Di1, Kang, Wenyu1, Wu, Qipeng1, Song, Anke1, Wu, Xuefeng1, Liu, Guozhen1, Wu, Jianfeng2, Wu, Yaping1, ypwu@xmu.edu.cn, Li, Xu1, xuliphys@xmu.edu.cn, Wu, Zhiming1, zmwu@xmu.edu.cn, Cai, Duanjun1, Yin, Jun2, Kang, Junyong1
Source: Nanoscale Research Letters; 8/15/2022, Vol. 17 Issue 1, p1-7, 7p
Database: Applied Science & Technology Source
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        Value: 10.1186/s11671-022-03712-5
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              Text: 8/15/2022
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