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Study of electrical properties of Al/Si3N4/n-GaAs MIS capacitors deposited at low and high frequency PECVD.

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Bibliographic Details
Title:	Study of electrical properties of Al/Si3N4/n-GaAs MIS capacitors deposited at low and high frequency PECVD.
Authors:	Zibar, Wafaa¹, Richard, Olivier^2,3, Drighil, Asmaa¹, Lachhab, Touria¹, Mziouek, Hasna^2,3, Aimez, Vincent^2,3, Jaouad, Abdelatif^2,3, Adhiri, Rhma¹, rahmadhiri@gmail.com
Source:	European Physical Journal - Applied Physics; 2022, Vol. 97, p1-9, 9p
Database:	Applied Science & Technology Source
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Description
ISSN:	12860042
DOI:	10.1051/epjap/2022220062