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Study of electrical properties of Al/Si3N4/n-GaAs MIS capacitors deposited at low and high frequency PECVD.

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Title: Study of electrical properties of Al/Si3N4/n-GaAs MIS capacitors deposited at low and high frequency PECVD.
Authors: Zibar, Wafaa1, Richard, Olivier2,3, Drighil, Asmaa1, Lachhab, Touria1, Mziouek, Hasna2,3, Aimez, Vincent2,3, Jaouad, Abdelatif2,3, Adhiri, Rhma1, rahmadhiri@gmail.com
Source: European Physical Journal - Applied Physics; 2022, Vol. 97, p1-9, 9p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 161216526
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  Data: Study of electrical properties of Al/Si3N4/n-GaAs MIS capacitors deposited at low and high frequency PECVD.
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  Data: <searchLink fieldCode="JN" term="%22European+Physical+Journal+-+Applied+Physics%22">European Physical Journal - Applied Physics</searchLink>; 2022, Vol. 97, p1-9, 9p
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      – Type: doi
        Value: 10.1051/epjap/2022220062
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      – Code: eng
        Text: English
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        PageCount: 9
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      – TitleFull: Study of electrical properties of Al/Si3N4/n-GaAs MIS capacitors deposited at low and high frequency PECVD.
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            NameFull: Zibar, Wafaa
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            NameFull: Richard, Olivier
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              Text: 2022
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              Y: 2022
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              Value: 97
          Titles:
            – TitleFull: European Physical Journal - Applied Physics
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