APA (7th ed.) Citation

Bengi, S., Yükseltürk, E., & Bülbül, M. M. (2023). Investigation of electrical characterization of Al/HfO2/p-Si structures in wide temperature range. Journal of Materials Science: Materials in Electronics, 34(3), 1. https://doi.org/10.1007/s10854-022-09613-8

Chicago Style (17th ed.) Citation

Bengi, Seda, Esra Yükseltürk, and M. Mahir Bülbül. "Investigation of Electrical Characterization of Al/HfO2/p-Si Structures in Wide Temperature Range." Journal of Materials Science: Materials in Electronics 34, no. 3 (2023): 1. https://doi.org/10.1007/s10854-022-09613-8.

MLA (9th ed.) Citation

Bengi, Seda, et al. "Investigation of Electrical Characterization of Al/HfO2/p-Si Structures in Wide Temperature Range." Journal of Materials Science: Materials in Electronics, vol. 34, no. 3, 2023, p. 1, https://doi.org/10.1007/s10854-022-09613-8.