Characteristic analysis of the MoS2/SiO2 interface field-effect transistor with varying MoS2 layers.
Saved in:
| Title: | Characteristic analysis of the MoS2/SiO2 interface field-effect transistor with varying MoS2 layers. |
|---|---|
| Authors: | Li, Haixia1, haixiali_sq@163.com, Li, Youyong2, Jiang, Han3, Mao, Lingfeng4, Ni, Yanan1 |
| Source: | Journal of Materials Science: Materials in Electronics; Feb2023, Vol. 34 Issue 5, p1-10, 10p |
| Database: | Applied Science & Technology Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
| ISSN: | 09574522 |
|---|---|
| DOI: | 10.1007/s10854-023-09869-8 |
