View in EDS HTML Full Text PDF Full Text

Characteristic analysis of the MoS2/SiO2 interface field-effect transistor with varying MoS2 layers.

Saved in:
Bibliographic Details
Title: Characteristic analysis of the MoS2/SiO2 interface field-effect transistor with varying MoS2 layers.
Authors: Li, Haixia1, haixiali_sq@163.com, Li, Youyong2, Jiang, Han3, Mao, Lingfeng4, Ni, Yanan1
Source: Journal of Materials Science: Materials in Electronics; Feb2023, Vol. 34 Issue 5, p1-10, 10p
Database: Applied Science & Technology Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 161691568
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Characteristic analysis of the MoS2/SiO2 interface field-effect transistor with varying MoS2 layers.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Li%2C+Haixia%22">Li, Haixia</searchLink><relatesTo>1</relatesTo>, <i>haixiali_sq@163.com</i><br /><searchLink fieldCode="AU" term="%22Li%2C+Youyong%22">Li, Youyong</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Jiang%2C+Han%22">Jiang, Han</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Mao%2C+Lingfeng%22">Mao, Lingfeng</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Ni%2C+Yanan%22">Ni, Yanan</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Feb2023, Vol. 34 Issue 5, p1-10, 10p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=161691568
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s10854-023-09869-8
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 10
        StartPage: 1
    Titles:
      – TitleFull: Characteristic analysis of the MoS2/SiO2 interface field-effect transistor with varying MoS2 layers.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Li, Haixia
      – PersonEntity:
          Name:
            NameFull: Li, Youyong
      – PersonEntity:
          Name:
            NameFull: Jiang, Han
      – PersonEntity:
          Name:
            NameFull: Mao, Lingfeng
      – PersonEntity:
          Name:
            NameFull: Ni, Yanan
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 15
              M: 02
              Text: Feb2023
              Type: published
              Y: 2023
          Identifiers:
            – Type: issn-print
              Value: 09574522
          Numbering:
            – Type: volume
              Value: 34
            – Type: issue
              Value: 5
          Titles:
            – TitleFull: Journal of Materials Science: Materials in Electronics
              Type: main
ResultId 1