APA (7th ed.) Citation

Lim, T., Lee, S., Lee, J., Choi, H., Jung, B., Baek, S., & Jang, J. (2023). Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics. Advanced Functional Materials, 33(8), 1. https://doi.org/10.1002/adfm.202212367

Chicago Style (17th ed.) Citation

Lim, Taebin, Suhui Lee, Jiseob Lee, HyungJin Choi, Byunglib Jung, SeungHyub Baek, and Jin Jang. "Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics." Advanced Functional Materials 33, no. 8 (2023): 1. https://doi.org/10.1002/adfm.202212367.

MLA (9th ed.) Citation

Lim, Taebin, et al. "Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics." Advanced Functional Materials, vol. 33, no. 8, 2023, p. 1, https://doi.org/10.1002/adfm.202212367.