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Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics.

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Title: Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics.
Authors: Lim, Taebin1, Lee, Suhui1, Lee, Jiseob1, Choi, HyungJin2, Jung, Byunglib1, Baek, SeungHyub2, Jang, Jin1, jjang@khu.ac.kr
Source: Advanced Functional Materials; 2/16/2023, Vol. 33 Issue 8, p1-12, 12p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 161968956
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Lim%2C+Taebin%22">Lim, Taebin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Lee%2C+Suhui%22">Lee, Suhui</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Lee%2C+Jiseob%22">Lee, Jiseob</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Choi%2C+HyungJin%22">Choi, HyungJin</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Jung%2C+Byunglib%22">Jung, Byunglib</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Baek%2C+SeungHyub%22">Baek, SeungHyub</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Jang%2C+Jin%22">Jang, Jin</searchLink><relatesTo>1</relatesTo>, <i>jjang@khu.ac.kr</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Advanced+Functional+Materials%22">Advanced Functional Materials</searchLink>; 2/16/2023, Vol. 33 Issue 8, p1-12, 12p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=161968956
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1002/adfm.202212367
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 12
        StartPage: 1
    Titles:
      – TitleFull: Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Lim, Taebin
      – PersonEntity:
          Name:
            NameFull: Lee, Suhui
      – PersonEntity:
          Name:
            NameFull: Lee, Jiseob
      – PersonEntity:
          Name:
            NameFull: Choi, HyungJin
      – PersonEntity:
          Name:
            NameFull: Jung, Byunglib
      – PersonEntity:
          Name:
            NameFull: Baek, SeungHyub
      – PersonEntity:
          Name:
            NameFull: Jang, Jin
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 16
              M: 02
              Text: 2/16/2023
              Type: published
              Y: 2023
          Identifiers:
            – Type: issn-print
              Value: 1616301X
          Numbering:
            – Type: volume
              Value: 33
            – Type: issue
              Value: 8
          Titles:
            – TitleFull: Advanced Functional Materials
              Type: main
ResultId 1