Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics.
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| Title: | Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics. |
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| Authors: | Lim, Taebin1, Lee, Suhui1, Lee, Jiseob1, Choi, HyungJin2, Jung, Byunglib1, Baek, SeungHyub2, Jang, Jin1, jjang@khu.ac.kr |
| Source: | Advanced Functional Materials; 2/16/2023, Vol. 33 Issue 8, p1-12, 12p |
| Database: | Applied Science & Technology Source |
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