View in EDS HTML Full Text PDF Full Text

Evolution of the thermal behavior and complexity of end-of-range defects in silicon pre-amorphized by Ge+ implantation.

Saved in:
Bibliographic Details
Title: Evolution of the thermal behavior and complexity of end-of-range defects in silicon pre-amorphized by Ge+ implantation.
Authors: Belafhaili, Amine1, a.belafhaili@um5r.ac.ma, Laanab, Larbi2
Source: Journal of Materials Science: Materials in Electronics; Feb2023, Vol. 34 Issue 5, p1-6, 6p
Database: Applied Science & Technology Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 161982068
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Evolution of the thermal behavior and complexity of end-of-range defects in silicon pre-amorphized by Ge+ implantation.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Belafhaili%2C+Amine%22">Belafhaili, Amine</searchLink><relatesTo>1</relatesTo>, <i>a.belafhaili@um5r.ac.ma</i><br /><searchLink fieldCode="AU" term="%22Laanab%2C+Larbi%22">Laanab, Larbi</searchLink><relatesTo>2</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Feb2023, Vol. 34 Issue 5, p1-6, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=161982068
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1007/s10854-022-09794-2
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 6
        StartPage: 1
    Titles:
      – TitleFull: Evolution of the thermal behavior and complexity of end-of-range defects in silicon pre-amorphized by Ge+ implantation.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Belafhaili, Amine
      – PersonEntity:
          Name:
            NameFull: Laanab, Larbi
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 15
              M: 02
              Text: Feb2023
              Type: published
              Y: 2023
          Identifiers:
            – Type: issn-print
              Value: 09574522
          Numbering:
            – Type: volume
              Value: 34
            – Type: issue
              Value: 5
          Titles:
            – TitleFull: Journal of Materials Science: Materials in Electronics
              Type: main
ResultId 1