APA (7th ed.) Citation

Manjunath, V., Chalapathi, U., Reddy, B. P., Ahn, C., & Park, S. (2023). Analysis of the chemical states and microstructural, electrical, and carrier transport properties of the Ni/HfO2/Ga2O3/n-GaN MOS junction. Journal of Materials Science: Materials in Electronics, 34(9), 1. https://doi.org/10.1007/s10854-023-10149-8

Chicago Style (17th ed.) Citation

Manjunath, V., U. Chalapathi, B. Purusottam Reddy, Chang-Hoi Ahn, and Si-Hyun Park. "Analysis of the Chemical States and Microstructural, Electrical, and Carrier Transport Properties of the Ni/HfO2/Ga2O3/n-GaN MOS Junction." Journal of Materials Science: Materials in Electronics 34, no. 9 (2023): 1. https://doi.org/10.1007/s10854-023-10149-8.

MLA (9th ed.) Citation

Manjunath, V., et al. "Analysis of the Chemical States and Microstructural, Electrical, and Carrier Transport Properties of the Ni/HfO2/Ga2O3/n-GaN MOS Junction." Journal of Materials Science: Materials in Electronics, vol. 34, no. 9, 2023, p. 1, https://doi.org/10.1007/s10854-023-10149-8.