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Analysis of the chemical states and microstructural, electrical, and carrier transport properties of the Ni/HfO2/Ga2O3/n-GaN MOS junction.

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Title: Analysis of the chemical states and microstructural, electrical, and carrier transport properties of the Ni/HfO2/Ga2O3/n-GaN MOS junction.
Authors: Manjunath, V.1,2, Chalapathi, U.1, Reddy, B. Purusottam1, Ahn, Chang-Hoi1, Park, Si-Hyun1, sihyun_park@ynu.ac.kr
Source: Journal of Materials Science: Materials in Electronics; Mar2023, Vol. 34 Issue 9, p1-15, 15p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 162587000
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PubType: Academic Journal
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  Data: Analysis of the chemical states and microstructural, electrical, and carrier transport properties of the Ni/HfO2/Ga2O3/n-GaN MOS junction.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Mar2023, Vol. 34 Issue 9, p1-15, 15p
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        Value: 10.1007/s10854-023-10149-8
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      – Code: eng
        Text: English
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        PageCount: 15
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      – TitleFull: Analysis of the chemical states and microstructural, electrical, and carrier transport properties of the Ni/HfO2/Ga2O3/n-GaN MOS junction.
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            NameFull: Manjunath, V.
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            NameFull: Chalapathi, U.
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            NameFull: Ahn, Chang-Hoi
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              Text: Mar2023
              Type: published
              Y: 2023
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              Value: 34
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