Analysis of the chemical states and microstructural, electrical, and carrier transport properties of the Ni/HfO2/Ga2O3/n-GaN MOS junction.
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| Title: | Analysis of the chemical states and microstructural, electrical, and carrier transport properties of the Ni/HfO2/Ga2O3/n-GaN MOS junction. |
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| Authors: | Manjunath, V.1,2, Chalapathi, U.1, Reddy, B. Purusottam1, Ahn, Chang-Hoi1, Park, Si-Hyun1, sihyun_park@ynu.ac.kr |
| Source: | Journal of Materials Science: Materials in Electronics; Mar2023, Vol. 34 Issue 9, p1-15, 15p |
| Database: | Applied Science & Technology Source |
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