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Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy.

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Title: Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy.
Authors: Nurzal, Nurzal1,2, Hsu, Ting-Yu1, Susanto, Iwan1,3, Yu, Ing-Song1, isyu@gms.ndhu.edu.tw
Source: Discover Nano; 4/7/2023, Vol. 18 Issue 1, p1-10, 10p
Database: Applied Science & Technology Source
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Header DbId: aci
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  Data: Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy.
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  Data: <searchLink fieldCode="AU" term="%22Nurzal%2C+Nurzal%22">Nurzal, Nurzal</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Hsu%2C+Ting-Yu%22">Hsu, Ting-Yu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Susanto%2C+Iwan%22">Susanto, Iwan</searchLink><relatesTo>1,3</relatesTo><br /><searchLink fieldCode="AU" term="%22Yu%2C+Ing-Song%22">Yu, Ing-Song</searchLink><relatesTo>1</relatesTo>, <i>isyu@gms.ndhu.edu.tw</i>
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  Data: <searchLink fieldCode="JN" term="%22Discover+Nano%22">Discover Nano</searchLink>; 4/7/2023, Vol. 18 Issue 1, p1-10, 10p
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      – Type: doi
        Value: 10.1186/s11671-023-03844-2
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      – Code: eng
        Text: English
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      – TitleFull: Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy.
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            NameFull: Hsu, Ting-Yu
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              Text: 4/7/2023
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              Y: 2023
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