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A novel generalized fractional‐order memristor model with fully explicit memory description.

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Bibliographic Details
Title: A novel generalized fractional‐order memristor model with fully explicit memory description.
Authors: Banchuin, Rawid1, rawid.ban@siam.edu
Source: International Journal of Circuit Theory & Applications; Apr2023, Vol. 51 Issue 4, p1935-1957, 23p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 162972138
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: A novel generalized fractional‐order memristor model with fully explicit memory description.
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  Data: <searchLink fieldCode="JN" term="%22International+Journal+of+Circuit+Theory+%26+Applications%22">International Journal of Circuit Theory & Applications</searchLink>; Apr2023, Vol. 51 Issue 4, p1935-1957, 23p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=162972138
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      – Type: doi
        Value: 10.1002/cta.3410
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      – Code: eng
        Text: English
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        PageCount: 23
        StartPage: 1935
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      – TitleFull: A novel generalized fractional‐order memristor model with fully explicit memory description.
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            NameFull: Banchuin, Rawid
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          Dates:
            – D: 01
              M: 04
              Text: Apr2023
              Type: published
              Y: 2023
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              Value: 51
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            – TitleFull: International Journal of Circuit Theory & Applications
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