APA (7th ed.) Citation

Villarreal-Faz, M., Meza-Reyes, P. G., Belio-Manzano, A., Hernández-Gaytán, L. M., Mercado-Ornelas, C. A., Perea-Parrales, F. E., . . . Cortes-Mestizo, I. E. (2023). Optical analysis of tin-doped GaNAs layers grown on GaAs by molecular beam epitaxy. Journal of Materials Science: Materials in Electronics, 34(9), 1. https://doi.org/10.1007/s10854-023-10195-2

Chicago Style (17th ed.) Citation

Villarreal-Faz, M., et al. "Optical Analysis of Tin-doped GaNAs Layers Grown on GaAs by Molecular Beam Epitaxy." Journal of Materials Science: Materials in Electronics 34, no. 9 (2023): 1. https://doi.org/10.1007/s10854-023-10195-2.

MLA (9th ed.) Citation

Villarreal-Faz, M., et al. "Optical Analysis of Tin-doped GaNAs Layers Grown on GaAs by Molecular Beam Epitaxy." Journal of Materials Science: Materials in Electronics, vol. 34, no. 9, 2023, p. 1, https://doi.org/10.1007/s10854-023-10195-2.