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Optical analysis of tin-doped GaNAs layers grown on GaAs by molecular beam epitaxy.

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Title: Optical analysis of tin-doped GaNAs layers grown on GaAs by molecular beam epitaxy.
Authors: Villarreal-Faz, M.1, Meza-Reyes, P. G.1, Belio-Manzano, A.1, Hernández-Gaytán, L. M.1, Mercado-Ornelas, C. A.1, Perea-Parrales, F. E.1, Olvera-Enríquez, J. P.1, Espinosa-Vega, L. I.1, Rodríguez, A. G.1, Yee-Rendón, C. M.2, Méndez-García, V. H.1, Cortes-Mestizo, I. E.3, irving.cortes@uaslp.mx
Source: Journal of Materials Science: Materials in Electronics; Mar2023, Vol. 34 Issue 9, p1-12, 12p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 163125307
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  Data: Optical analysis of tin-doped GaNAs layers grown on GaAs by molecular beam epitaxy.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Mar2023, Vol. 34 Issue 9, p1-12, 12p
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        Value: 10.1007/s10854-023-10195-2
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              Text: Mar2023
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