Carrier concentration and in-plane mobility in both non-intentionally and Si-doped InAsSb and InAs/InAsSb type-II superlattice materials for space-based infrared detectors.

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Bibliographic Details
Title:	Carrier concentration and in-plane mobility in both non-intentionally and Si-doped InAsSb and InAs/InAsSb type-II superlattice materials for space-based infrared detectors.
Authors:	Morath, Christian P.¹, christian.morath.2@spaceforce.mil, Casias, Lilian K.^2,3, Umana-Membreno, Gilberto A.⁴, Webster, Preston T.¹, Grant, Perry C.¹, Maestas, Diana¹, Cowan, Vincent M.¹, Faraone, Lorenzo⁴, Krishna, Sanjay⁵, Balakrishnan, Ganesh³
Source:	Opto-Electronics Review; 2023 Special Issue, Vol. 31, p1-8, 8p
Database:	Applied Science & Technology Source

Description
ISSN:	12303402
DOI:	10.24425/opelre.2023.144554