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Carrier concentration and in-plane mobility in both non-intentionally and Si-doped InAsSb and InAs/InAsSb type-II superlattice materials for space-based infrared detectors.

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Title: Carrier concentration and in-plane mobility in both non-intentionally and Si-doped InAsSb and InAs/InAsSb type-II superlattice materials for space-based infrared detectors.
Authors: Morath, Christian P.1, christian.morath.2@spaceforce.mil, Casias, Lilian K.2,3, Umana-Membreno, Gilberto A.4, Webster, Preston T.1, Grant, Perry C.1, Maestas, Diana1, Cowan, Vincent M.1, Faraone, Lorenzo4, Krishna, Sanjay5, Balakrishnan, Ganesh3
Source: Opto-Electronics Review; 2023 Special Issue, Vol. 31, p1-8, 8p
Database: Applied Science & Technology Source
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  Data: Carrier concentration and in-plane mobility in both non-intentionally and Si-doped InAsSb and InAs/InAsSb type-II superlattice materials for space-based infrared detectors.
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  Data: <searchLink fieldCode="JN" term="%22Opto-Electronics+Review%22">Opto-Electronics Review</searchLink>; 2023 Special Issue, Vol. 31, p1-8, 8p
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        Value: 10.24425/opelre.2023.144554
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      – Code: eng
        Text: English
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      – TitleFull: Carrier concentration and in-plane mobility in both non-intentionally and Si-doped InAsSb and InAs/InAsSb type-II superlattice materials for space-based infrared detectors.
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              Text: 2023 Special Issue
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              Y: 2023
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