Cathodoluminescence Characterization of Point Defects Generated through Ion Implantations in 4H-SiC.
Saved in:
| Title: | Cathodoluminescence Characterization of Point Defects Generated through Ion Implantations in 4H-SiC. |
|---|---|
| Authors: | Vuillermet, Enora1, enora.vuillermet@utt.fr, Bercu, Nicolas2, nicolas.bercu@univ-reims.fr, Etienne, Florence2, florence.etienne@univ-reims.fr, Lazar, Mihai1, mihai.lazar@utt.fr |
| Source: | Coatings (2079-6412); Jun2023, Vol. 13 Issue 6, p992, 12p |
| Database: | Applied Science & Technology Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
Be the first to leave a comment!