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Electrical and dielectric properties of RF sputtered nano Al2O3 film annealed at 400 °C.

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Title: Electrical and dielectric properties of RF sputtered nano Al2O3 film annealed at 400 °C.
Authors: Yalçın, Yeşim1, Arslan, Öznur1,2, İldeş, Caner3, Çokduygulular, Erman4, Çetinkaya, Çağlar2, Kınacı, Barış5,6, bariskinaci@gazi.edu.tr
Source: Journal of Materials Science: Materials in Electronics; Sep2023, Vol. 34 Issue 25, p1-10, 10p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 171870027
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Electrical and dielectric properties of RF sputtered nano Al2O3 film annealed at 400 °C.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Sep2023, Vol. 34 Issue 25, p1-10, 10p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=171870027
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1007/s10854-023-11222-y
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      – Code: eng
        Text: English
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        PageCount: 10
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      – TitleFull: Electrical and dielectric properties of RF sputtered nano Al2O3 film annealed at 400 °C.
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            NameFull: Yalçın, Yeşim
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            NameFull: Arslan, Öznur
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            NameFull: İldeş, Caner
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            NameFull: Çokduygulular, Erman
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            NameFull: Çetinkaya, Çağlar
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            NameFull: Kınacı, Barış
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          Dates:
            – D: 01
              M: 09
              Text: Sep2023
              Type: published
              Y: 2023
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              Value: 34
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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