APA (7th ed.) Citation

Kumar, K., & Awana, V. P. S. (2023). Signatures of crossover between weak anti-localization to weak localization effect in Gd doped Sb2Te3 single crystal. Journal of Materials Science: Materials in Electronics, 34(26), 1. https://doi.org/10.1007/s10854-023-11237-5

Chicago Style (17th ed.) Citation

Kumar, Kapil, and V. P. S. Awana. "Signatures of Crossover Between Weak Anti-localization to Weak Localization Effect in Gd Doped Sb2Te3 Single Crystal." Journal of Materials Science: Materials in Electronics 34, no. 26 (2023): 1. https://doi.org/10.1007/s10854-023-11237-5.

MLA (9th ed.) Citation

Kumar, Kapil, and V. P. S. Awana. "Signatures of Crossover Between Weak Anti-localization to Weak Localization Effect in Gd Doped Sb2Te3 Single Crystal." Journal of Materials Science: Materials in Electronics, vol. 34, no. 26, 2023, p. 1, https://doi.org/10.1007/s10854-023-11237-5.