Improved analog and AC performance for high frequency linearity based applications using gate-stack dual metal (DM) nanowire (NW) FET (4H-SiC).
Saved in:
| Title: | Improved analog and AC performance for high frequency linearity based applications using gate-stack dual metal (DM) nanowire (NW) FET (4H-SiC). |
|---|---|
| Authors: | Neeraj, Neeraj1, s.neerumalik@gmail.com, Sharma, Shobha1, Goel, Anubha1, Rewari, Sonam1, Gupta, R. S.1 |
| Source: | Microsystem Technologies; Oct2023, Vol. 29 Issue 10, p1403-1416, 14p |
| Database: | Applied Science & Technology Source |
| ISSN: | 09467076 |
|---|---|
| DOI: | 10.1007/s00542-023-05480-3 |
