APA (7th ed.) Citation

Maity, I., Parween, S., Mukherjee, A. K., & Thakur, A. D. (2024). Improvement in the resistive switching performance of LaMnO3 by dendritic Cu2S. Journal of Materials Science: Materials in Electronics, 35(2), 1. https://doi.org/10.1007/s10854-023-11852-2

Chicago Style (17th ed.) Citation

Maity, Indranil, Shahin Parween, A. K. Mukherjee, and Ajay D. Thakur. "Improvement in the Resistive Switching Performance of LaMnO3 by Dendritic Cu2S." Journal of Materials Science: Materials in Electronics 35, no. 2 (2024): 1. https://doi.org/10.1007/s10854-023-11852-2.

MLA (9th ed.) Citation

Maity, Indranil, et al. "Improvement in the Resistive Switching Performance of LaMnO3 by Dendritic Cu2S." Journal of Materials Science: Materials in Electronics, vol. 35, no. 2, 2024, p. 1, https://doi.org/10.1007/s10854-023-11852-2.