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Improvement in the resistive switching performance of LaMnO3 by dendritic Cu2S.

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Title: Improvement in the resistive switching performance of LaMnO3 by dendritic Cu2S.
Authors: Maity, Indranil1, Parween, Shahin1, Mukherjee, A. K.1, akm@iitp.ac.in, Thakur, Ajay D.1, ajay.thakur@iitp.ac.in
Source: Journal of Materials Science: Materials in Electronics; Jan2024, Vol. 35 Issue 2, p1-14, 14p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 174853709
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PubType: Academic Journal
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  Data: Improvement in the resistive switching performance of LaMnO3 by dendritic Cu2S.
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  Data: <searchLink fieldCode="AU" term="%22Maity%2C+Indranil%22">Maity, Indranil</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Parween%2C+Shahin%22">Parween, Shahin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Mukherjee%2C+A%2E+K%2E%22">Mukherjee, A. K.</searchLink><relatesTo>1</relatesTo>, <i>akm@iitp.ac.in</i><br /><searchLink fieldCode="AU" term="%22Thakur%2C+Ajay+D%2E%22">Thakur, Ajay D.</searchLink><relatesTo>1</relatesTo>, <i>ajay.thakur@iitp.ac.in</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Jan2024, Vol. 35 Issue 2, p1-14, 14p
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      – Type: doi
        Value: 10.1007/s10854-023-11852-2
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      – Code: eng
        Text: English
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      – TitleFull: Improvement in the resistive switching performance of LaMnO3 by dendritic Cu2S.
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            NameFull: Maity, Indranil
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            NameFull: Parween, Shahin
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            NameFull: Mukherjee, A. K.
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              Text: Jan2024
              Type: published
              Y: 2024
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              Value: 35
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