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Modulating surface-state-induced band bending for efficient charge transport and photoelectrochemical hydrogen production over bismuth vanadate photoanode.

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Title: Modulating surface-state-induced band bending for efficient charge transport and photoelectrochemical hydrogen production over bismuth vanadate photoanode.
Authors: Shang, Jun1,2, shangjun@htu.edu.cn, Cheng, Yajing1, Shen, Xuyang1, Dai, Zhiyu1, Gao, Yanjun1
Source: Journal of Materials Science: Materials in Electronics; Feb2024, Vol. 35 Issue 4, p1-13, 13p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 175315823
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Modulating surface-state-induced band bending for efficient charge transport and photoelectrochemical hydrogen production over bismuth vanadate photoanode.
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  Data: <searchLink fieldCode="AU" term="%22Shang%2C+Jun%22">Shang, Jun</searchLink><relatesTo>1,2</relatesTo>, <i>shangjun@htu.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Cheng%2C+Yajing%22">Cheng, Yajing</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Shen%2C+Xuyang%22">Shen, Xuyang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Dai%2C+Zhiyu%22">Dai, Zhiyu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Gao%2C+Yanjun%22">Gao, Yanjun</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Feb2024, Vol. 35 Issue 4, p1-13, 13p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=175315823
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1007/s10854-024-12027-3
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      – Code: eng
        Text: English
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        PageCount: 13
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      – TitleFull: Modulating surface-state-induced band bending for efficient charge transport and photoelectrochemical hydrogen production over bismuth vanadate photoanode.
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            NameFull: Shang, Jun
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            NameFull: Cheng, Yajing
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            NameFull: Shen, Xuyang
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            NameFull: Dai, Zhiyu
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            – D: 01
              M: 02
              Text: Feb2024
              Type: published
              Y: 2024
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              Value: 35
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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