APA (7th ed.) Citation

Al-Hardan, N. H., Hamid, M. A. A., Firdaus-Raih, M., Jalar, A., Kamaruddin, A. Z., Keng, L. K., . . . Ahmed, N. M. (2024). Titanium dioxide ion-sensitive extended gate field effect transistor (ISEGFET): Selective detection of potassium ions in artificial blood serum. Journal of Materials Science: Materials in Electronics, 35(5), 1. https://doi.org/10.1007/s10854-024-12068-8

Chicago Style (17th ed.) Citation

Al-Hardan, Naif H., Muhammad Azmi Abdul Hamid, Mohd Firdaus-Raih, Azman Jalar, Ain Zafirah Kamaruddin, Lim Kar Keng, Ensaf Mohammed AL-Khalqi, and Naser M. Ahmed. "Titanium Dioxide Ion-sensitive Extended Gate Field Effect Transistor (ISEGFET): Selective Detection of Potassium Ions in Artificial Blood Serum." Journal of Materials Science: Materials in Electronics 35, no. 5 (2024): 1. https://doi.org/10.1007/s10854-024-12068-8.

MLA (9th ed.) Citation

Al-Hardan, Naif H., et al. "Titanium Dioxide Ion-sensitive Extended Gate Field Effect Transistor (ISEGFET): Selective Detection of Potassium Ions in Artificial Blood Serum." Journal of Materials Science: Materials in Electronics, vol. 35, no. 5, 2024, p. 1, https://doi.org/10.1007/s10854-024-12068-8.