Probing the critical point of MgSiO3 using deep potential simulation.

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Bibliographic Details
Title: Probing the critical point of MgSiO3 using deep potential simulation.
Authors: Xu, Fei-Yang1,2, Li, Zhi-Guo2, zhiguo_li@foxmail.com, Chen, Xiang-Rong1, xrchen@scu.edu.cn, Geng, Hua Y.2, Liu, Lei3, Hu, Jianbo2, jianbo.hu@caep.cn
Source: Journal of Applied Physics; 3/28/2024, Vol. 135 Issue 12, p1-10, 10p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/5.0189696