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Probing the critical point of MgSiO3 using deep potential simulation.

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Title: Probing the critical point of MgSiO3 using deep potential simulation.
Authors: Xu, Fei-Yang1,2, Li, Zhi-Guo2, zhiguo_li@foxmail.com, Chen, Xiang-Rong1, xrchen@scu.edu.cn, Geng, Hua Y.2, Liu, Lei3, Hu, Jianbo2, jianbo.hu@caep.cn
Source: Journal of Applied Physics; 3/28/2024, Vol. 135 Issue 12, p1-10, 10p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 176342892
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=176342892
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        Value: 10.1063/5.0189696
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      – Code: eng
        Text: English
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        PageCount: 10
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      – TitleFull: Probing the critical point of MgSiO3 using deep potential simulation.
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            NameFull: Xu, Fei-Yang
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            NameFull: Li, Zhi-Guo
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            NameFull: Geng, Hua Y.
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            NameFull: Liu, Lei
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            – D: 28
              M: 03
              Text: 3/28/2024
              Type: published
              Y: 2024
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