Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition.

Saved in:
Bibliographic Details
Title: Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition.
Authors: Hisyam, Muhammad Iznul1, 17145940@siswa.um.edu.my, Shuhaimi, Ahmad1, shuhaimi@um.edu.mysma190013@siswa.um.edu.my, Norhaniza, Rizuan1, Mansor, Marwan1, Williams, Adam2, adam_joseph@silterra.com, Mat Hussin, Mohd Rofei3, rofei@mimos.my
Source: Crystals (2073-4352); Apr2024, Vol. 14 Issue 4, p371, 11p
Database: Applied Science & Technology Source
Full text is not displayed to guests.
Description
ISSN:20734352
DOI:10.3390/cryst14040371