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Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition.

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Title: Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition.
Authors: Hisyam, Muhammad Iznul1, 17145940@siswa.um.edu.my, Shuhaimi, Ahmad1, shuhaimi@um.edu.mysma190013@siswa.um.edu.my, Norhaniza, Rizuan1, Mansor, Marwan1, Williams, Adam2, adam_joseph@silterra.com, Mat Hussin, Mohd Rofei3, rofei@mimos.my
Source: Crystals (2073-4352); Apr2024, Vol. 14 Issue 4, p371, 11p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 176906219
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=176906219
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        Value: 10.3390/cryst14040371
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      – Code: eng
        Text: English
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        PageCount: 11
        StartPage: 371
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      – TitleFull: Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition.
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            – D: 01
              M: 04
              Text: Apr2024
              Type: published
              Y: 2024
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