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Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky barrier diodes.

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Title: Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky barrier diodes.
Authors: Cho, Young-Hun1, Chung, Seung-Hwan1, Park, Se-Rim1, Choi, Ji-Soo1, Moon, Soo-Young1, Lee, Hyung-Jin1, Lee, Geon-Hee1, Koo, Sang-Mo1, smkoo@kw.ac.kr
Source: Journal of Materials Science: Materials in Electronics; May2024, Vol. 35 Issue 14, p1-8, 8p
Database: Applied Science & Technology Source
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PubType: Academic Journal
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  Data: Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky barrier diodes.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; May2024, Vol. 35 Issue 14, p1-8, 8p
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        Value: 10.1007/s10854-024-12551-2
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        Text: English
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      – TitleFull: Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky barrier diodes.
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              Text: May2024
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