APA (7th ed.) Citation

Hayat, M. F., Rahman, N. U., Ullah, A., Rahman, N., Sohail, M., Iqbal, S., . . . Khan, R. (2024). Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing. Journal of Materials Science: Materials in Electronics, 35(16), 1. https://doi.org/10.1007/s10854-024-12790-3

Chicago Style (17th ed.) Citation

Hayat, Muhammad Faisal, et al. "Resistive Switching Properties in Ferromagnetic Co-doped ZnO Thin Films-based Memristors for Neuromorphic Computing." Journal of Materials Science: Materials in Electronics 35, no. 16 (2024): 1. https://doi.org/10.1007/s10854-024-12790-3.

MLA (9th ed.) Citation

Hayat, Muhammad Faisal, et al. "Resistive Switching Properties in Ferromagnetic Co-doped ZnO Thin Films-based Memristors for Neuromorphic Computing." Journal of Materials Science: Materials in Electronics, vol. 35, no. 16, 2024, p. 1, https://doi.org/10.1007/s10854-024-12790-3.