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Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing.

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Title: Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing.
Authors: Hayat, Muhammad Faisal1, Rahman, Naveed Ur1, Ullah, Aziz1, Rahman, Nasir1, Sohail, Mohammad1, Iqbal, Shahid2, Khan, Alamzeb3, Abdullaev, Sherzod4,5, Althubeiti, Khaled6, AlOtaibi, Sattam7, Khan, Rajwali1,8, rajwalipak@zju.edu.cn
Source: Journal of Materials Science: Materials in Electronics; Jun2024, Vol. 35 Issue 16, p1-14, 14p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 177598209
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Jun2024, Vol. 35 Issue 16, p1-14, 14p
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        Value: 10.1007/s10854-024-12790-3
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        Text: English
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            – D: 01
              M: 06
              Text: Jun2024
              Type: published
              Y: 2024
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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