Kunioka, H., Shiojiri, D., Takahashi, S., Hiratsuka, K., Yamaguchi, M., Hirayama, N., . . . Iida, T. (2024). Investigation of group 13 elements as potential candidates for p-type dopants in the narrow-gap thermoelectric semiconductor α-SrSi2. Journal of Materials Science, 59(18), 7840. https://doi.org/10.1007/s10853-024-09653-x
Chicago Style (17th ed.) CitationKunioka, Haruno, Daishi Shiojiri, Shinta Takahashi, Kota Hiratsuka, Masato Yamaguchi, Naomi Hirayama, Yoji Imai, Motoharu Imai, and Tsutomu Iida. "Investigation of Group 13 Elements as Potential Candidates for P-type Dopants in the Narrow-gap Thermoelectric Semiconductor α-SrSi2." Journal of Materials Science 59, no. 18 (2024): 7840. https://doi.org/10.1007/s10853-024-09653-x.
MLA (9th ed.) CitationKunioka, Haruno, et al. "Investigation of Group 13 Elements as Potential Candidates for P-type Dopants in the Narrow-gap Thermoelectric Semiconductor α-SrSi2." Journal of Materials Science, vol. 59, no. 18, 2024, p. 7840, https://doi.org/10.1007/s10853-024-09653-x.