APA (7th ed.) Citation

Henry Thomas, G., Ashok Kumar, A., Kaleemulla, S., & Rajagopal Reddy, V. (2024). Electrical, structural, morphological and photovoltaic properties of Au/n-Ge heterojunctions using V2O5 interfacial layer. Journal of Materials Science: Materials in Electronics, 35(19), 1. https://doi.org/10.1007/s10854-024-13038-w

Chicago Style (17th ed.) Citation

Henry Thomas, G., A. Ashok Kumar, S. Kaleemulla, and V. Rajagopal Reddy. "Electrical, Structural, Morphological and Photovoltaic Properties of Au/n-Ge Heterojunctions Using V2O5 Interfacial Layer." Journal of Materials Science: Materials in Electronics 35, no. 19 (2024): 1. https://doi.org/10.1007/s10854-024-13038-w.

MLA (9th ed.) Citation

Henry Thomas, G., et al. "Electrical, Structural, Morphological and Photovoltaic Properties of Au/n-Ge Heterojunctions Using V2O5 Interfacial Layer." Journal of Materials Science: Materials in Electronics, vol. 35, no. 19, 2024, p. 1, https://doi.org/10.1007/s10854-024-13038-w.