Electronic structure and magnetothermal property of H-VSe2 monolayer manipulated by carrier doping.
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| Title: | Electronic structure and magnetothermal property of H-VSe2 monolayer manipulated by carrier doping. |
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| Authors: | Jiang, Jun-Kang1, Wu, Yan-Ling1, aawuyanling@163.com, Geng, Hua-Yun2, Chen, Xiang-Rong1, xrchen@scu.edu.cn |
| Source: | Journal of Applied Physics; 8/7/2024, Vol. 136 Issue 5, p1-11, 11p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/5.0223854 |
