View in EDS HTML Full Text PDF Full Text

Optical Study on Temperature-Dependent Absorption Edge of γ -InSe-Layered Semiconductor.

Saved in:

Bibliographic Details
Title:	Optical Study on Temperature-Dependent Absorption Edge of γ -InSe-Layered Semiconductor.
Authors:	Wu, Wen-Te¹, Tiong, Kwong-Kau¹, Tan, Shih-Wei¹, Hu, Sheng-Yao², Lee, Yueh-Chien³, yclee8858@gmail.com, Chen, Ruei-San⁴, Wu, Chia-Ti⁵
Source:	Applied Sciences (2076-3417); Aug2024, Vol. 14 Issue 15, p6676, 9p
Database:	Applied Science & Technology Source
Full text is not displayed to guests. Login for full access.

Description
ISSN:	20763417
DOI:	10.3390/app14156676