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A zinc oxide-based threshold switching memristor for simulating synaptic plasticity and artificial nociceptor.

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Title: A zinc oxide-based threshold switching memristor for simulating synaptic plasticity and artificial nociceptor.
Authors: Xiaoqi, Li1, Jianbo, Jiang1, Guangyu, Liu1, Bao, Zhou1, Enming, Zhao1, zhaoem163@163.com
Source: Journal of Materials Science: Materials in Electronics; Aug2024, Vol. 35 Issue 24, p1-10, 10p
Database: Applied Science & Technology Source
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An: 179143654
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  Data: A zinc oxide-based threshold switching memristor for simulating synaptic plasticity and artificial nociceptor.
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        Value: 10.1007/s10854-024-13373-y
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      – Code: eng
        Text: English
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            NameFull: Guangyu, Liu
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              Text: Aug2024
              Type: published
              Y: 2024
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