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Accurate Estimation of Data Retention Voltage (DRV) for a 6T SRAM Cell at 45 nm, 65 nm, and 130 nm Technology Nodes.

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Title: Accurate Estimation of Data Retention Voltage (DRV) for a 6T SRAM Cell at 45 nm, 65 nm, and 130 nm Technology Nodes.
Authors: Gupta, Ruchi1, ku.mittal@gmail.com, Goyal, Mohit2, mohitgoyal1000@gmail.com, Dasgupta, S.3, sudebfec@iitr.ac.in
Source: IETE Journal of Research; Apr2024, Vol. 70 Issue 4, p4025-4036, 12p
Database: Applied Science & Technology Source
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  Data: Accurate Estimation of Data Retention Voltage (DRV) for a 6T SRAM Cell at 45 nm, 65 nm, and 130 nm Technology Nodes.
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  Data: <searchLink fieldCode="AU" term="%22Gupta%2C+Ruchi%22">Gupta, Ruchi</searchLink><relatesTo>1</relatesTo>, <i>ku.mittal@gmail.com</i><br /><searchLink fieldCode="AU" term="%22Goyal%2C+Mohit%22">Goyal, Mohit</searchLink><relatesTo>2</relatesTo>, <i>mohitgoyal1000@gmail.com</i><br /><searchLink fieldCode="AU" term="%22Dasgupta%2C+S%2E%22">Dasgupta, S.</searchLink><relatesTo>3</relatesTo>, <i>sudebfec@iitr.ac.in</i>
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  Data: <searchLink fieldCode="JN" term="%22IETE+Journal+of+Research%22">IETE Journal of Research</searchLink>; Apr2024, Vol. 70 Issue 4, p4025-4036, 12p
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1080/03772063.2023.2198991
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      – Code: eng
        Text: English
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        PageCount: 12
        StartPage: 4025
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      – TitleFull: Accurate Estimation of Data Retention Voltage (DRV) for a 6T SRAM Cell at 45 nm, 65 nm, and 130 nm Technology Nodes.
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            NameFull: Gupta, Ruchi
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            NameFull: Goyal, Mohit
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            – D: 01
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              Text: Apr2024
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              Y: 2024
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              Value: 70
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