Unveiling the effects of thallium and bismuth p-n doping on germanium-based clusters (n5 to n12) for applications in semiconductor materials.

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Bibliographic Details
Title: Unveiling the effects of thallium and bismuth p-n doping on germanium-based clusters (n5 to n12) for applications in semiconductor materials.
Authors: Zafar, Ayesha1, Altaf, Yasir1, Yasir.Altaf@ue.edu.pk, Zafar, Aiman1, Hashmi, Muhammad Ali1, Ahmed, Fahim1,2, Fahim.Ahmed@ue.edu.pk, Rubab, Syeda Laila1
Source: Materials Science in Semiconductor Processing; Dec2024, Vol. 184, pN.PAG-N.PAG, 1p
Database: Applied Science & Technology Source
Description
ISSN:13698001
DOI:10.1016/j.mssp.2024.108818