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Transport and electrical properties of Si and Ge quantum dots embedded in oxide layers of MOS structures for optoelectronic applications.

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Title: Transport and electrical properties of Si and Ge quantum dots embedded in oxide layers of MOS structures for optoelectronic applications.
Authors: Saron, K. M. A.1, kabdalla@ju.edu.sa, Aouassa, Mansour1, mansour.aouassa@yahoo.fr, Hassan, N. K.2, Aladim, A. K.1, Ibrahim, Mohammed1, Bouabdellaoui, Mohammed3
Source: Journal of Materials Science: Materials in Electronics; Sep2024, Vol. 35 Issue 27, p1-11, 11p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 179982029
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PubType: Academic Journal
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  Data: Transport and electrical properties of Si and Ge quantum dots embedded in oxide layers of MOS structures for optoelectronic applications.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Sep2024, Vol. 35 Issue 27, p1-11, 11p
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        Value: 10.1007/s10854-024-13542-z
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      – TitleFull: Transport and electrical properties of Si and Ge quantum dots embedded in oxide layers of MOS structures for optoelectronic applications.
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              M: 09
              Text: Sep2024
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              Y: 2024
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